Luminescence from color centres induced by oxidation and ion irradiation in 4H–SiC
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference54 articles.
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3. Single-photon sources based on novel color centers in silicon carbide p–i–n diodes: combining theory and experiment;Khramtsov;Nano-Micro Lett.,2021
4. A silicon carbide room-temperature single-photon source;Castelletto;Nat. Mater.,2014
5. Similarity and difference of the impact of ion implantation and thermal oxidation on the lattice structure of 4H-SiC (0001) surface;Hatmanto;Appl. Phys. Express,2019
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Nondestructive Spectroscopic Investigation of N-Type 4H-SiC Defects Irradiated With Low Fluence 16.5 MeV/u Ta Ions;IEEE Transactions on Nuclear Science;2024-02
2. Creation and repair of luminescence defects in hexagonal boron nitride by irradiation and annealing for optical neutron detection;Journal of Luminescence;2023-09
3. Monitoring of the recovery of ion-damaged 4H-SiC with in situ synchrotron X-ray diffraction as a tool for strain-engineering;Journal of Materials Science;2022-11
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