Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3159812
Reference25 articles.
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3. High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy
4. Interface trap passivation for SiO2∕(0001¯) C-terminated 4H-SiC
5. Growth and Nitridation of Silicon-Dioxide Films on Silicon-Carbide
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