Basal plane dislocation-free epitaxy of silicon carbide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2093931
Reference9 articles.
1. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
2. Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide p-i-n diodes
3. Stacking fault nucleation sites in diffused 4H-SiC p‐i‐n diodes.
4. Dislocation conversion in 4H silicon carbide epitaxy
5. Direct observation of dislocations propagated from 4H–SiC substrate to epitaxial layer by X-ray topography
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