Atomic-scale analysis of hydrogen-terminated Si(110) surfaces after wet cleaning
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1840108
Reference10 articles.
1. Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces
2. Design of Radial Line Slot Antennas at 8.3 GHz for Large Area Uniform Plasma Generation
3. IEEE International Electron Devices Meeting Technical Digest;Sugawa S.,2001
4. Dependence of Surface Microroughness of CZ, FZ, and EPI Wafers on Wet Chemical Processing
5. Atomically resolved scanning tunneling microscopy of hydrogen-terminated Si(001) surfaces after HF cleaning
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3. Wet chemical preparation and isotope exchange process of H/D-terminated Si(111) and Si(110) studied by adsorbate vibrational analysis;Japanese Journal of Applied Physics;2017-01-12
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