Wet chemical preparation and isotope exchange process of H/D-terminated Si(111) and Si(110) studied by adsorbate vibrational analysis
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=2/a=025701/pdf
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1. The Effects of Direct Source-to-Drain Tunneling and Variation in the Body Thickness on (100) and (110) Sub-10-nm Si Double-Gate Transistors
2. Soft Error Susceptibilities of 22 nm Tri-Gate Devices
3. Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface
4. Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
5. Advantage of silicon nitride gate insulator transistor by using microwave excited high-density plasma for applying 100nm technology node
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1. Anisotropic surface phonon dispersion of a deuterium-terminated Si(110)-(1 × 1) surface studied by high-resolution electron-energy-loss spectroscopy and first-principles calculations: Isotope effect;Surface Science;2020-02
2. Morphological evolution of Ag nanoclusters grown on hydrogen-terminated si(111)-(1 × 1) surface: Appearance of quantum size effect at room-temperature;Surface Science;2019-12
3. Atomistic investigation on the initial stage of growth and interface formation of Fe on H-terminated Si(111)-(1 × 1) surface;Surface Science;2019-08
4. Anisotropic electronic band structure of intrinsic Si(110) studied by angle-resolved photoemission spectroscopy and first-principles calculations;Physical Review B;2017-09-14
5. Effects of the deposition rate on growth modes of Ag islands on the hydrogen-terminated Si(111)-(1 × 1) surface: The role of surface energy and quantum size effect;Journal of Applied Physics;2017-09-05
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