Ab initio calculations of surface phonons of the hydrogen-terminated Si(110)-(1 × 1) surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
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1. Observations of “Clean” Surfaces of Si, Ge, and GaAs by Low-Energy Electron Diffraction
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3. Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface
4. Soft Error Susceptibilities of 22 nm Tri-Gate Devices
5. Atomic‐Scale Elucidation of the Anisotropic Etching of (110) n‐Si in Aqueous NH 4 F : Studies by In Situ Scanning Tunneling Microscopy
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1. Surface structure of MOVPE-prepared As-modified Si(100) substrates;Applied Surface Science;2024-11
2. Anisotropic surface phonon dispersion of a deuterium-terminated Si(110)-(1 × 1) surface studied by high-resolution electron-energy-loss spectroscopy and first-principles calculations: Isotope effect;Surface Science;2020-02
3. Anisotropic electronic band structure of intrinsic Si(110) studied by angle-resolved photoemission spectroscopy and first-principles calculations;Physical Review B;2017-09-14
4. Wet chemical preparation and isotope exchange process of H/D-terminated Si(111) and Si(110) studied by adsorbate vibrational analysis;Japanese Journal of Applied Physics;2017-01-12
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