Atomically resolved scanning tunneling microscopy of hydrogen-terminated Si(001) surfaces after HF cleaning
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125788
Reference11 articles.
1. Electrochemical etching of Si(001) in NH4F solutions: Initial stage and {111} microfacet formation
2. Atomic scale flattening and hydrogen termination of the Si(001) surface by wet‐chemical treatment
3. Wet chemical etching of Si(100) surfaces in concentrated NH4F solution: formation of (2 × 1)H reconstructed Si(100) terraces versus (111) facetting
4. Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology
5. Scanning tunneling microscopy of silicon surfaces in air: Observation of atomic images
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3. Probing the electronic structure at semiconductor surfaces using charge transport in nanomembranes;Nature Communications;2013-01-08
4. Application of hydrogenation to low-temperature cleaning of the Si(001) surface in the processes of molecular-beam epitaxy: Investigation by scanning tunneling microscopy, reflected high-energy electron diffraction, and high resolution transmission electron microscopy;Journal of Applied Physics;2012-07
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