Application of hydrogenation to low-temperature cleaning of the Si(001) surface in the processes of molecular-beam epitaxy: Investigation by scanning tunneling microscopy, reflected high-energy electron diffraction, and high resolution transmission electron microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4732073
Reference44 articles.
1. Ge quantum dot arrays grown by ultrahigh vacuum molecular-beam epitaxy on the Si(001) surface: nucleation, morphology, and CMOS compatibility
2. New Cleaning and Surface Conditioning Techniques and Technologies
3. Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE
4. Influence of point defects on the optical properties of self-assembled Ge/Si hut clusters
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1. Silicon-germanium and platinum silicide nanostructures for silicon based photonics;SPIE Proceedings;2017-05-30
2. Surface Hydrogenation of the Si(100)-2×1 and Electronic Properties of Silicon Dangling Bonds on the Si(100):H Surfaces;On-Surface Atomic Wires and Logic Gates;2017
3. Ge clusters and wetting layers forming from granular films on the Si(001) surface;Journal of Physics: Conference Series;2016-02
4. Evidence for Kinetic Limitations as a Controlling Factor of Ge Pyramid Formation: a Study of Structural Features of Ge/Si(001) Wetting Layer Formed by Ge Deposition at Room Temperature Followed by Annealing at 600 °C;Nanoscale Research Letters;2015-07-16
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