Study of buried silicon nitride layers synthesized by ion implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.327649
Reference12 articles.
1. Epitaxial silicon layers grown on ion‐implanted silicon nitride layers
2. Electron microscopic studies of silicon layers irradiated with high doses of nitrogen ions
3. Properties investigation of thin silicon nitride layers synthesized by ion implantation
4. Formation of thin Si3N4 films by nitrogen ion implantation into silicon
5. Evaluation of glancing angle X-ray diffraction and MeV 4He backscattering analyses of silicide formation
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2. Temperature effect study of silicon-on-insulator structures prepared by high dose implantation of nitrogen;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-12
3. Fabrication and nuclear analysis of isotopic 14N and 15N ion-implanted silicon standards;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-05
4. Mechanism of large area dislocation defect reduction in GaN layers on AlN∕Si (111) by substrate engineering;Journal of Applied Physics;2007-07-15
5. Ion Beam Synthesis and Characterization of Crystalline Si3N4 Surface Layers;physica status solidi (a);2002-11
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