Electron microscopic studies of silicon layers irradiated with high doses of nitrogen ions-Reference-Cited by-同舟云学术

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Electron microscopic studies of silicon layers irradiated with high doses of nitrogen ions

Published:1976-07-16 Issue:1 Volume:36 Page:81-88
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:en
Short-container-title:Phys. Stat. Sol. (a)

Author:

Pavlov P. V.,Kruze T. A.,Tetelbaum D. I.,Zorin E. I.,Shitova E. V.,Gudkova N. V.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. , , , , , and , in: Radiation Physics of Nonmetallic Crystals, Izd. Nauka i Tekhnika, Minsk 1970.

2. and , Proc. II. Internat. Conf. Ion Implantation in Semiconductors, Garmisch-Partenkirchen, May 1971, Ed. and , Springer-Verlag, 1971 (p. 241).

3. , , and , Radiation Effects in Semiconductors, Proc. Santa Fe Conf., New York 1968 (p. 406).

4. , and , Ion Implantation in Semiconductors, Academic Press (Inc.), New York/London 1970.

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