Mechanism of large area dislocation defect reduction in GaN layers on AlN∕Si (111) by substrate engineering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2753706
Reference24 articles.
1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
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3. High-quality GaN/Si(111) epitaxial layers grown with various Al0.3Ga0.7N/GaN superlattices as intermediate layer by MOCVD
4. Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy
5. Approach to obtain high quality GaN on Si and SiC-on-silicon-on-insulator compliant substrate by molecular-beam epitaxy
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2. Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering;Technical Physics Letters;2020-04
3. GaN Heteroepitaxy on Strain-Engineered (111) Si/Si1−xGex;Journal of Electronic Materials;2019-02-21
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