Coordinated stress management and dislocation control in GaN growth on Si (111) substrates by using a carbon nanotube mask-Reference-Cited by-同舟云学术

Coordinated stress management and dislocation control in GaN growth on Si (111) substrates by using a carbon nanotube mask

Author:

Wang Kun¹²³⁴⁵^ORCID,Yu Tongjun¹²³⁴⁵,Wei Yang⁶⁷⁸⁵^ORCID,Li Mengda¹²³⁴⁵,Zhang Guoyi¹²³⁴⁵,Fan Shoushan⁶⁷⁸⁵

Affiliation:

1. State Key Laboratory for Artificial Microstructures and Mesoscopic Physics

2. School of Physics

3. Peking University

4. Beijing 100871

5. P. R. China

6. Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center

7. Tsinghua University

8. Beijing 100084

Abstract

A novel method based on a unique CNT mask is proposed to realize coordinated stress management and dislocation control.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

Reference36 articles.

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