High-quality GaN/Si(111) epitaxial layers grown with various Al0.3Ga0.7N/GaN superlattices as intermediate layer by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Ultraviolet and violet GaN light emitting diodes on silicon
2. Visible-blind GaN Schottky barrier detectors grown on Si(111)
3. The effect of AlN buffer layer on GaN grown on (111)-oriented Si substrates by MOCVD
4. Thermal microcrack distribution control in GaN layers on Si substrates by lateral confined epitaxy
5. GaN-based optoelectronics on silicon substrates
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