Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Crack-Free InGaN/GaN Light Emitters on Si(111)
2. Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors
3. Thermal microcrack distribution control in GaN layers on Si substrates by lateral confined epitaxy
4. Lateral confined epitaxy of GaN layers on Si substrates
Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Quality Improvement of GaN Epi-layers Grown with a Strain-Releasing Scheme on Suspended Ultrathin Si Nanofilm Substrate;Nanoscale Research Letters;2022-10-15
2. Suspended-ultrathin Si membrane on SOI: a novel structure to reduce thermal stress of GaN epilayer;IOP Conference Series: Materials Science and Engineering;2020-03-01
3. GaN-On-Si Epitaxy;digital Encyclopedia of Applied Physics;2019-08-20
4. LED Materials: Epitaxy and Quantum Well Structures;Handbook of Advanced Lighting Technology;2017
5. LED Materials: Epitaxy and Quantum Well Structures;Handbook of Advanced Lighting Technology;2016
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3