Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1856211
Reference16 articles.
1. Investigation of buffer growth temperatures for MOVPE of GaN on Si(111)
2. GaN-Based Devices on Si
3. Growth and Characterisation of AlGaN/GaN HEMT on Silicon Substrates
4. GaN-based optoelectronics on silicon substrates
5. Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking
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