Investigation of buffer growth temperatures for MOVPE of GaN on Si(111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness
2. Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (111)
3. The effect of AlN buffer layer on GaN grown on (111)-oriented Si substrates by MOCVD
4. Metal–semiconductor–metal GaN ultraviolet photodetectors on Si(111)
5. Structural investigation of GaN layers grown on Si(111) substrates using a nitridated AlAs buffer layer
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1. LEDs Based on Heteroepitaxial GaN on Si Substrates;Topics in Applied Physics;2017
2. Thickness optimization of GaN layers by in-situ observation of GaN MOVPE on Si (111);physica status solidi (c);2013-09-25
3. Effect of metal buffer layers on the growth of GaN on Si substrates;Journal of the Korean Crystal Growth and Crystal Technology;2013-08-31
4. Pulsed characterisation of GaN HEMTs on Si (1 1 1) substrate;International Journal of Electronics;2013-07
5. Epitaxy Part A. LEDs Based on Heteroepitaxial GaN on Si Substrates;Topics in Applied Physics;2013
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