Metal–semiconductor–metal GaN ultraviolet photodetectors on Si(111)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.127004
Reference20 articles.
1. Perspective On Gallium Nitride
2. The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
3. Single-crystal GaN pyramids grown on (111)Si substrates by selective lateral overgrowth
4. High-performance GaN p-n junction photodetectors for solar ultraviolet applications
5. High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN
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1. Enhanced Specific Detectivity and UV-to-Visible Rejection-Ratio of Visible-Blind Metal–Semiconductor–Metal Photodetectors, Based on Epitaxial GaN/Si(111);IEEE Transactions on Electron Devices;2023-07
2. High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111);2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11
3. Dislocation density control of GaN epitaxial film and its photodetector;Vacuum;2022-03
4. A Highly Sensitive and Robust GaN Ultraviolet Photodetector Fabricated on 150-mm Si (111) Wafer;IEEE Transactions on Electron Devices;2021-06
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