High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111)-Reference-Cited by-同舟云学术

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High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111)

Published:2022-12-11 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Conference on Emerging Electronics (ICEE)
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Author:

Pal Pinki¹,Bhardwaj Bhupesh¹,Dahiya Robin¹,Suihkonen Sami²,Lemettinen Jori²,Laha Apurba³,Kabra Dinesh¹,Mahapatra Suddhasatta¹

Affiliation:

1. Indian Institute of Technology Bombay,Department of Physics,Mumbai,India,400076

2. Aalto university,Department of Electronics and Nanoengineering,Aalto,Finland,FI-00076

3. Indian Institute of Technology Bombay,Department of Electrical Engineering,Mumbai,India,400076

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117590/10117577/10117858.pdf?arnumber=10117858

Reference16 articles.

1. Field and thermionic-field emission in Schottky barriers

2. Gain mechanism and carrier transport in high responsivity AlGaN-based solar blind metal semiconductor metal photodetectors

3. Material-to-device performance correlation for AlGaN-based solar-blind p–i–n photodiodes

4. MOCVD growth of GaN on SEMI-spec 200 mm Si

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