MOCVD growth of GaN on SEMI-spec 200 mm Si-Reference-Cited by-同舟云学术

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MOCVD growth of GaN on SEMI-spec 200 mm Si

Published:2017-04-25 Issue:6 Volume:32 Page:065001
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Zhang Li,Hong Lee Kwang,Riko I Made,Huang Chieh-Chih,Kadir Abdul,Lee Kenneth E,Jin Chua Soo,Fitzgerald Eugene A

Funder

National Research Foundation Singapore

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/32/i=6/a=065001/pdf

Reference23 articles.

1. Sixteen years GaN on Si

2. Metamorphic transistors: Building blocks for hetero-integrated circuits

3. (Invited) SiGe and III-V Materials and Devices: New HEMT and LED Elements in 0.18-Micron CMOS Process and Design

4. (Invited) Novel Integrated Circuit Platforms Employing Monolithic Silicon CMOS + GaN Devices

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1. Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates;Inorganics;2024-07-30

2. Research Progress in Liquid Phase Growth of GaN Crystals;Chemistry – A European Journal;2024-01-12

3. Atomic-Scale Characterization of Extended Defects in Wurtzite GaN Heterostructures;ACS Applied Nano Materials;2023-07-22

4. High-Pressure Bulk Synthesis of InN by Solid-State Reaction of Binary Oxide in a Multi-Anvil Apparatus;Inorganic Chemistry;2023-03-16

5. High-Detectivity Ultraviolet Photodetectors with Epitaxial GaN on Si(111);2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11

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