High-performance GaN p-n junction photodetectors for solar ultraviolet applications-Reference-Cited by-同舟云学术

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High-performance GaN p-n junction photodetectors for solar ultraviolet applications

Published:1998-09-01 Issue:9 Volume:13 Page:1042-1046
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Monroy E,Muñoz E,Sánchez F J,Calle F,Calleja E,Beaumont B,Gibart P,Muñoz J A,Cussó F

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Emerging gallium nitride based devices

2. Semiconductor ultraviolet detectors

3. High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers

4. Photoconductor gain mechanisms in GaN ultraviolet detectors

5. Kinetics of photoconductivity in n‐type GaN photodetector

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