Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure-Reference-Cited by-同舟云学术

Reconfigurable Radio‐Frequency High‐Electron Mobility Transistors via Ferroelectric‐Based Gallium Nitride Heterostructure

Author:

Yang Jeong Yong¹,Yeom Min Jae¹,Lee Jaeyong¹,Lee Kyusang²^ORCID,Park Changkun¹,Heo Junseok³,Yoo Geonwook¹

Affiliation:

1. School of Electronic Engineering Soongsil University Seoul 06938 South Korea

2. Department of Electrical and Computer Engineering University of Virginia Charlottesville VA 22904 USA

3. Department of Electrical and Computer Engineering Ajou University Suwon 16499 South Korea

Funder

FP7 Information and Communication Technologies

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Link

Reference49 articles.

2. R.Chau S.Datta A.Majumdar inTechnical Digest – IEEE Compound Semiconductor Integrated Circuit Symp. (CSIC)2005 pp.17–20.

4. D.Ueda inIEEE Int. Symp. Power Semiconductor Devices and ICs (ISPSD)2002 pp.17–24.

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