Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment
Author:
Affiliation:
1. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85287, USA
2. Department of Physics, Arizona State University, Tempe, Arizona 85287, USA
Funder
National Science Foundation
National Aeronautics and Space Administration
Advanced Research Projects Agency - Energy
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0018473
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