2.8 kV Avalanche in Vertical GaN PN Diode Utilizing Field Plate on Hydrogen Passivated P-Layer
Author:
Affiliation:
1. Department of Electrical Engineering, Stanford University, Stanford, CA, USA
Funder
Office of Naval Research
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9741089/09706478.pdf?arnumber=9706478
Reference21 articles.
1. Low-leakage kV-class GaN vertical p–n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension
2. High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings
3. Hydrogen-Modulated Step Graded Junction Termination Extension in GaN Vertical p-n Diodes
4. Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing
5. Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT
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