Kinetics of growth of the oxidation stacking faults: The capture of interstitials by partial dislocation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.331288
Reference9 articles.
1. Kinetics of growth of the oxidation stacking faults
2. The Growth of Oxidation Stacking Faults and the Point Defect Generation at Si ‐ SiO Interface during Thermal Oxidation of Silicon
3. Oxidation, Impurity Diffusion, and Defect Growth in Silicon—An Overview
4. Oxidation‐enhanced or retarded diffusion and the growth or shrinkage of oxidation‐induced stacking faults in silicon
5. On the annealing of dislocation loops by climb
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1. Intrinsic Point Defects and Grown-in Defects in Silicon;Solid State Phenomena;1999-10
2. Effect of native point defects on morphology of gettering centres in CZ-silicon wafers;Materials Science and Engineering: B;1996-01
3. Effect of native point defects on morphology of gettering centres in CZ-silicon wafers;C,H,N and O in Si and Characterization and Simulation of Materials and Processes;1996
4. A study of the growth and shrinkage of stacking faults in SIMOX;Materials Science and Engineering: B;1995-01
5. Electron microscopy study of oxidation-induced defects at the silicon-silicon-dioxide interface;Materials Science and Engineering: B;1993-04
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