A study of the growth and shrinkage of stacking faults in SIMOX
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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1. Crystallographic defects in thermally oxidized wafer bonded silicon on insulator (SOI) substrates;Journal of Electronic Materials;1999-04
2. Nucleation, growth and retrogrowth of oxidation induced stacking faults in thin silicon-on-insulator;Journal of Electronic Materials;1999-01
3. EBIC investigation of defects in SOI materials using a Schottky diode and buried oxide capacitor;Materials Science and Engineering: B;1997-04
4. Diffusion of Silicon Interstitials in thin Silicon Films on Insulator in Neutral and Oxidising Annealing Ambients;MRS Proceedings;1997
5. General Kinetic Rules for Rapid Thermal Processing;MRS Proceedings;1996
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