Effect of native point defects on morphology of gettering centres in CZ-silicon wafers-Reference-Cited by-同舟云学术

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Effect of native point defects on morphology of gettering centres in CZ-silicon wafers

Published:1996-01 Issue:1-3 Volume:36 Page:120-124
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Enisherlova K.L.,Rusak T.F.,Mil'vidskii M.G.,Reznick V.J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference6 articles.

1. New intrinsic gettering process in silicon based on interactions of silicon interstitials

2. Theoretical model for self‐interstitial generation at the Si/SiO2interface during thermal oxidation of silicon

3. Kinetics of growth of the oxidation stacking faults: The capture of interstitials by partial dislocation

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Iron contamination in silicon technology;Applied Physics A: Materials Science & Processing;2000-05-01

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