Segregation of oxygen vacancy at metal-HfO2 interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2943322
Reference20 articles.
1. Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges
2. Fermi Pinning-Induced Thermal Instability of Metal-Gate Work Functions
3. Fermi level pinning by defects in HfO2-metal gate stacks
4. Oxygen Vacancies in High Dielectric Constant Oxide-Semiconductor Films
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