Three-Dimensional Mechanistic Modeling of Gate Leakage Current in High- κ MOSFETs-Reference-Cited by-同舟云学术

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Three-Dimensional Mechanistic Modeling of Gate Leakage Current in High- κ MOSFETs

Published:2020-02-10 Issue:2 Volume:13 Page:
ISSN:2331-7019
Container-title:Physical Review Applied
language:en
Short-container-title:Phys. Rev. Applied

Author:

Liu Feilong^ORCID,Liu Yue-Yang,Li Ling,Zhou Guofu^ORCID,Jiang Xiangwei,Luo Jun-Wei

Funder

National Natural Science Foundation of China

Youth Innovation Promotion Association CAS

Guangdong Innovative Research Team Program

Guangdong Province Program

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.13.024020/fulltext

Reference89 articles.

1. High-κ gate dielectrics: Current status and materials properties considerations

2. A review of gate tunneling current in MOS devices

3. Interfaces and defects of high-K oxides on silicon

4. A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability

5. Modelling of electron and hole trapping in oxides

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