Author:
Kaczer B.,Franco J.,Weckx P.,Roussel Ph.J.,Putcha V.,Bury E.,Simicic M.,Chasin A.,Linten D.,Parvais B.,Catthoor F.,Rzepa G.,Waltl M.,Grasser T.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference74 articles.
1. Characteristics of the surface-state charge (Qss) of thermally oxidized silicon;Deal;J. Electrochem. Soc.,1967
2. MOS (Metal Oxide Semiconductor) Physics and Technology;Nicollian,1982
3. Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFET;Franco,2017
4. Negative bias stress of MOS devices at high electric fields and degradation of MNOS devices;Jeppson;J. Appl. Phys.,1977
5. The negative bias temperature instability in MOS devices: a review;Stathis;Microelectron. Reliab.,2006
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