Defects in ferroelectric HfO2
Author:
Affiliation:
1. Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region, Russia
2. Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
Abstract
Funder
Ministry of Science and Higher Education of the Russian Federation
Russian Science Foundation
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR01260F
Reference230 articles.
1. Ferroelectricity in hafnium oxide thin films
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4. Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications
5. Ferroelectric Second-Order Memristor
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