Defects in ferroelectric HfO2
Author:
Affiliation:
1. Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region, Russia
2. Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, NE 68588, USA
Abstract
Funder
Ministry of Science and Higher Education of the Russian Federation
Russian Science Foundation
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Link
http://pubs.rsc.org/en/content/articlepdf/2021/NR/D1NR01260F
Reference230 articles.
1. Ferroelectricity in hafnium oxide thin films
2. A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction
3. Epitaxial Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films and Their Implementations in Memristors for Brain‐Inspired Computing
4. Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications
5. Ferroelectric Second-Order Memristor
Cited by 62 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of point defects on charge transport in nickel ferrite NiFe2O4;Computational Materials Science;2025-01
2. Phase transition kinetics and sublayer optimization of HfO2/ZrO2 superlattice ferroelectric thin films;Applied Physics Letters;2024-08-19
3. Stabilizing the Ferroelectric Phase of Hf0.5Zr0.5O2 Thin Films by Charge Transfer;Physical Review Letters;2024-07-18
4. Defects and oxygen impurities in ferroelectric wurtzite Al1−xScxN alloys;Applied Physics Letters;2024-07-08
5. First‐Principles Calculation of Basic Properties of Rhombohedral Hafnium Oxide with Space Group R3;physica status solidi (b);2024-06-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3