A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction-Reference-Cited by-同舟云学术

A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction

Published:2017-04-10 Issue:15 Volume:9 Page:13262-13268
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ambriz-Vargas Fabian¹^ORCID,Kolhatkar Gitanjali¹,Broyer Maxime¹,Hadj-Youssef Azza¹,Nouar Rafik²,Sarkissian Andranik²,Thomas Reji¹,Gomez-Yáñez Carlos³^ORCID,Gauthier Marc A.¹,Ruediger Andreas¹

Affiliation:

1. Centre Énergie, Matériaux et Télécommunications, INRS, Varennes, Québec J3X1S2, Canada

2. Plasmionique Inc., 9092 Rimouski, Brossard, Québec J4X2S3, Canada

3. Departamento de Ingeniería en Metalurgia y Materiales, Instituto Politécnico Nacional, Zacatenco 07738, México

Funder

Fonds de Recherche du Québec - Nature et Technologies

Consejo Nacional de Ciencia y Tecnología

Natural Sciences and Engineering Research Council of Canada

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.6b16173

Reference26 articles.

1. Emerging memories: resistive switching mechanisms and current status

2. Ferroelectric tunnel junctions for information storage and processing

3. Beyond the barrier

4. Tunneling Across a Ferroelectric

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