InAsp‐ndiodes grown on GaAs and GaAs‐coated Si by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106490
Reference17 articles.
1. Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates
2. Growth and transport properties of InAs epilayers on GaAs
3. Initial stages of heteroepitaxial growth of InAs on Si (100)
4. Magneto-optical and transport studies of ultrahigh mobility films of InAs grown on GaAs by molecular beam epitaxy
5. Studies by cross‐sectional transmission electron microscope of InAs grown by molecular beam epitaxy on GaAs substrates
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3. Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si;Applied Physics Letters;2020-12-28
4. Mid-infrared type-II InAs/InAsSb quantum wells integrated on silicon;Applied Physics Letters;2020-09-28
5. InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K;Scientific Reports;2019-09-06
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