Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si-Reference-Cited by-同舟云学术

Optimized InAlAs graded buffer and tensile-strained dislocation filter layer for high quality InAs photodetector grown on Si

Author:

Ryu Geunhwan¹,Woo Seungwan¹²^ORCID,Kang Soo Seok¹,Chu Rafael Jumar¹³^ORCID,Han Jae-Hoon¹,Lee In-Hwan²^ORCID,Jung Daehwan¹³^ORCID,Choi Won Jun¹

Affiliation:

1. Center for Opto-electronic Materials and Devices, Korea Institute of Science and Technology, Seoul 02792, South Korea

2. Department of Materials Science and Engineering, Korea University, Seoul 02481, South Korea

3. Division of Nano and Information Technology, KIST School at University of Science and Technology, Seoul 02792, South Korea

Funder

KIST Flagship

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference27 articles.

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