High mobility metamorphic AlSb/InAs heterostructures grown on InP substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells
2. Antimonide-based compound semiconductors for electronic devices: A review
3. Influence of the buffer layers on the morphology and the transport properties in InAs/(Al,Ga)Sb quantum wells grown by molecular beam epitaxy
4. Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface
5. Heuristic rules for group IV dopant site selection in III–V compounds
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