Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors-Reference-Cited by-同舟云学术

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Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors

Published:2015-02-09 Issue:3 Volume:15 Page:1684-1690
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Konar Aniruddha¹,Mathew John²,Nayak Kaushik³,Bajaj Mohit¹,Pandey Rajan K.¹,Dhara Sajal²,Murali K. V. R. M.¹,Deshmukh Mandar M.²

Affiliation:

1. IBM Semiconductor Research and Development Center, Manyata Embassy Business Park, Nagawara, Bangalore 560 045, India

2. Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, 1 Homi Bhabha Road, Mumbai 400005, India

3. Department of Electrical Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400 076, India

Funder

International Business Machines Corporation

Government of India

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl5043165

Reference29 articles.

1. Nanowire electronics comes of age

2. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

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