Magneto-optical and transport studies of ultrahigh mobility films of InAs grown on GaAs by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Magneto-optical and transport studies of ultrahigh mobility films of InAs grown on GaAs by molecular beam epitaxy

Published:1989-04-01 Issue:4 Volume:4 Page:303-308
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Holmes S,Stradling R A,Wang P D,Droopad R,Parker S D,Williams R L

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/4/i=4/a=038/pdf

Reference29 articles.

1. Insitucontacts to GaAs based on InAs

2. Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxy

3. Long‐wavelength photoluminescence of InAs1−xSbx(0

4. Demonstration of an InAsSb strained‐layer superlattice photodiode

5. Growth of InSb and InAs1−xSbxon GaAs by molecular beam epitaxy

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1. InAsSb-based photodetectors;Mid-infrared Optoelectronics;2020

2. Realization of nanoscaled tubular conductors by means of GaAs/InAs core/shell nanowires;Nanotechnology;2012-12-21

3. Existence and removal of Cu2Se second phase in coevaporated Cu2ZnSnSe4thin films;Journal of Applied Physics;2012-03

4. Interrelation of the construction of the metamorphic InAlAs/InGaAs nanoheterostructures with the InAs content in the active layer of 76–100% with their surface morphology and electrical properties;Semiconductors;2011-09

5. Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates;Crystallography Reports;2011-09

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