Interrelation of the construction of the metamorphic InAlAs/InGaAs nanoheterostructures with the InAs content in the active layer of 76–100% with their surface morphology and electrical properties-Reference-Cited by-同舟云学术

Interrelation of the construction of the metamorphic InAlAs/InGaAs nanoheterostructures with the InAs content in the active layer of 76–100% with their surface morphology and electrical properties

Published:2011-09 Issue:9 Volume:45 Page:1158-1163
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Vasil’evskii I. S.,Galiev G. B.,Klimov E. A.,Kvanin A. L.,Pushkarev S. S.,Pushkin M. A.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782611090247.pdf

Reference22 articles.

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4. S. Holmes, R. A. Stradling, P. D. Wang, R. Droopad, S. D. Parker, and R. L. Williams, Semicond. Sci. Technol. 4, 303 (1989).

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