Growth and transport properties of InAs epilayers on GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99938
Reference19 articles.
1. Backside‐illuminated InAs1−xSbx‐InAs narrow‐band photodetectors
2. In1−xGaxAs‐GaSb1−yAsyheterojunctions by molecular beam epitaxy
3. Backside‐illuminated InAsSb/GaSb broadband detectors
4. Proposal for strained type II superlattice infrared detectors
5. Long wavelength InAs1−xSbx/GaAs detectors prepared by molecular beam epitaxy
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