Studies by cross‐sectional transmission electron microscope of InAs grown by molecular beam epitaxy on GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.91977
Reference6 articles.
1. In1−xGaxAs‐GaSb1−yAsyheterojunctions by molecular beam epitaxy
2. Molecular‐beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy
3. Substrate effect on the lattice constants of the MBE‐grown In1−xGaxAs and GaSb1−yAsy
4. Effect of lattice mismatch on the electron mobilities of InAs grown on GaAs by MBE
5. Dislocation morphology in graded heterojunctions: GaAs1?xPx
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1. InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K;Scientific Reports;2019-09-06
2. Epitaxy and Device Properties of InGaAs Photodetectors with Relatively High Lattice Mismatch;Epitaxy;2018-03-07
3. Depth dependent lattice disorder and strain in Mn-implanted and post-annealed InAs thin films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2011-04
4. Room-temperature ferromagneticlike behavior in Mn-implanted and postannealed InAs layers deposited by molecular beam epitaxy;Journal of Applied Physics;2009-04
5. Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique;Journal of Materials Science;2004-04
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