Epitaxy and Device Properties of InGaAs Photodetectors with Relatively High Lattice Mismatch
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InTech
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http://www.intechopen.com/download/pdf/56568
Reference44 articles.
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2. Zhang YG, Gu Y. Gas source MBE grown wavelength extending InGaAs photodetectors. In: Betta GFD, editor. Advances in Photodiodes. Croatia: InTech; 2011. pp. 349-376. DOI: 10.5772/13910
3. Tangring I, Wang SM, Zhu XR, Larsson A, Lai ZH, Sadeghi M. Mint: Manipulation of strain relaxation in metamorphic heterostructures. Applied Physics Letters. 2007;90:071904. DOI: 10.1063/1.2435609
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