Optical and structural properties of In-rich InxGa1−xAs epitaxial layers on (1 0 0) InP for SWIR detectors-Reference-Cited by-同舟云学术

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Optical and structural properties of In-rich InxGa1−xAs epitaxial layers on (1 0 0) InP for SWIR detectors

Published:2020-12 Issue: Volume:262 Page:114769
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Smiri Badreddine,Ben Arbia Marwa,Ilkay Demir,Saidi Faouzi,Othmen Zied,Dkhil Brahim,Ismail Altuntas,Sezai Elagoz,Hassen Fredj,Maaref Hassen

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference38 articles.

1. Structural and electrical characterizations of InxGa1-xAs/InP structures for infrared photodetector applications;Asar;J. Appl. Phys.,2014

2. Comprehensive growth and characterization study on highly n-doped ingaas as a contact layer for quantum cascade laser applications;Demir;Semicond. Sci. Technol.,2018

3. Spectral broadening due to post-growth annealing of a long-wave InGaAs/GaAs quantum dot infrared photodetector with a quaternary barrier layer;Adhikary;Thin Solid Films,2014

4. Surface-interface analysis of InxGa1-xAs/InP heterostructure in positive and negative mismatch system;Zhao;Surf. Interface Anal.,2019

5. Interruption time effects on InGaAs/InAlAs superlattices of quantum cascade laser structures grown by MOCVD;Demir;Superlattice. Microst.,2016

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1. A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality;Cumhuriyet Science Journal;2024-06-30

2. Migration barriers for diffusion of As and P atoms in InP and InAs via vacancies and interstitial atoms;Acta Materialia;2024-05

3. Effect of InAs insertion layer on the structural and optical property improvement of InGaAs/InAlAs multiple quantum wells;Journal of Alloys and Compounds;2024-05

4. Effects of Diffusion Barrier Layers on the Performance of Lattice-Mismatched Metamorphic In0.83Ga0.17As Photodetectors;Electronics;2024-04-02

5. Analyzing extended wavelength InGaAs photodetectors: the effects of window and active layer thickness on optical characteristics;Optical and Quantum Electronics;2024-02-17

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