Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes

Published:2015-10-28 Issue:16 Volume:118 Page:164504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wu Xiaoming¹,Liu Junlin¹,Jiang Fengyi¹

Affiliation:

1. National Engineering Technology Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047, People's Republic of China

Funder

Fund for Less Developed Regions of the National Natural Science Foundation of China

National Key Technology Research and Development Program of China

National Science Foundation for Young Scientists of China

State Key Program of National Natural Science of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4934503

Reference18 articles.

1. Emission and recombination characteristics ofGa1−xInxN∕GaNquantum well structures with nonradiative recombination suppression by V-shaped pits

2. Analysis of V defects in GaN-based light emitting diodes by scanning transmission electron microscopy and electron beam induced current

3. Suppression of Nonradiative Recombination by V-Shaped Pits inGaInN/GaNQuantum Wells Produces a Large Increase in the Light Emission Efficiency

4. Structure and formation mechanism of V defects in multiple InGaN∕GaN quantum well layers

5. Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays;PhotoniX;2024-08-14

2. Pure edge-dislocation half-loops in low-temperature GaN for V-defect formation;Physical Review Applied;2024-06-17

3. Mechanism of V-Shaped Pits on Promoting Hole Injection in the InGaN MQWs: First-Principles Investigation;ACS Omega;2024-01-29

4. Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy;Physical Review Applied;2023-12-26

5. Optimizing performance and energy consumption in GaN(n)/InxGa1-xN/GaN/AlGaN/GaN(p) light-emitting diodes by quantum-well number and mole fraction;Digest Journal of Nanomaterials and Biostructures;2023-12-20

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3