Structure and formation mechanism of V defects in multiple InGaN∕GaN quantum well layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2180532
Reference28 articles.
1. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes
2. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
3. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
4. Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse Mode
5. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
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