Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits-Reference-Cited by-同舟云学术

Fabrication of High Efficiency Green InGaN/GaN MicroLEDs by Modulating Potential Barrier Height of the Sidewall MQWs in V-Pits

Published:2024-06 Issue:3 Volume:16 Page:1-9
ISSN:1943-0655
Container-title:IEEE Photonics Journal
language:
Short-container-title:IEEE Photonics J.

Author:

Liu Hsin-Yu¹^ORCID,Zhang Donghao²^ORCID,Zhang Zhongying³^ORCID,Lai Chaohsu²^ORCID,Lin Zongmin²^ORCID,Lee Chia-En³^ORCID,Bao Lijun²^ORCID,Chang Sheng-Po⁴^ORCID,Chang Shoou-Jinn¹^ORCID

Affiliation:

1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan City, Taiwan

2. Department of Electronic Science, Xiamen University, Xiamen, China

3. Xiamen San'an Optoelectronic Company Ltd., Xiamen, China

4. Department of Microelectronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung City, Taiwan

Funder

National Natural Science Foundation of China

National Science and Technology Council

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/4563994/10504673/10494520.pdf?arnumber=10494520

Reference37 articles.

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2. Review—Progress in High Performance III-Nitride Micro-Light-Emitting Diodes

3. Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations

4. Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers

5. Effect of same-temperature GaN cap layer on the InGaNGaN multiquantum well of green light-emitting diode on silicon substrate;Zheng;Sci. World J.,2013