Review—Progress in High Performance III-Nitride Micro-Light-Emitting Diodes
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference147 articles.
1. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
2. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
3. GaN Growth Using GaN Buffer Layer
4. Novel metalorganic chemical vapor deposition system for GaN growth
5. Hole Compensation Mechanism of P-Type GaN Films
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