Analysis of V defects in GaN-based light emitting diodes by scanning transmission electron microscopy and electron beam induced current
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2945232
Reference15 articles.
1. Pit formation in GaInN quantum wells
2. Formation Mechanism of Nanotubes in GaN
3. Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
4. Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density
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