Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1384906
Reference16 articles.
1. III–nitrides: Growth, characterization, and properties
2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
3. Gas source molecular beam epitaxy of wurtzite GaN on sapphire substrates using GaN buffer layers
4. Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3
5. The atomic structure of {101̄0} inversion domain boundaries in GaN/sapphire layers
Cited by 167 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. V-Pits and Trench-Like Defects in High Periodicity MQWs GaN-Based Solar Cells: Extensive Electro-Optical Analysis;IEEE Transactions on Electron Devices;2024-03
2. Efficient InGaN‐Based Red Light‐Emitting Diodes by Modulating Trench Defects;Advanced Functional Materials;2024-01-21
3. Enhanced Efficiency InGaN/GaN Multiple Quantum Well Structures via Strain Engineering and Ultrathin Subwells Formed by V-Pit Sidewalls;ACS Applied Optical Materials;2024-01-02
4. Influence of V-Pits on the Turn-On Voltage of GaN-Based High Periodicity Multiple Quantum Well Solar Cells;IEEE Journal of Photovoltaics;2023-11
5. Polarization Properties of Wurtzite III-Nitride Alloys Using the Hexagonal Reference Structure;ECS Journal of Solid State Science and Technology;2023-10-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3