Gas source molecular beam epitaxy of wurtzite GaN on sapphire substrates using GaN buffer layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119526
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1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
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3. GaN Growth Using GaN Buffer Layer
4. Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates
5. The effect of GaN and ain buffer layers on GaN film properties grown on both C-plane and A-plane sapphire
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