Influence of the heterostructure design on the optical properties of GaN and Al0.1Ga0.9N quantum dots for ultraviolet emission
Author:
Affiliation:
1. Université Côte d'Azur, CNRS, CRHEA, 06560 Valbonne, France
2. Université Montpellier 2, L2C, UMR 5221, 34095 Montpellier Cedex 5, France
3. CNRS-CRHEA, Rue B. Gregory, 06560 Valbonne, France
Funder
Agence Nationale de la Recherche (ANR)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5000238
Reference43 articles.
1. Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp
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5. Blue-light emission from GaN∕Al0.5Ga0.5N quantum dots
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