Time-resolved luminescence studies of proton-implanted GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3226108
Reference19 articles.
1. High power subterahertz electromagnetic wave radiation from GaN photoconductive switch
2. GaN-based semiconductor saturable absorber mirror operating around 415 nm
3. Mode locking of a GaInN semiconductor laser with an internal saturable absorber
4. Electron traps created in n-type GaN during 25 keV hydrogen implantation
5. H, He, and N implant isolation of n‐type GaN
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